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我们提供100MHz到110GHz的低噪声放大器。

低噪声工艺的发展路线主要为降低栅宽,增加掺杂浓度,为了满足太赫兹频段应用的需求,目前量产70nm工艺D007IH和将要发布的40nm工艺D004IH工艺,特别适合设计开发在100GHz-200GHz的高性能低噪声放大器。

采用100nmGaN/Si工艺技术(即D01GH工艺)开发的低噪声放大器具备与传统pHEMT GaAs工艺相媲美的噪声性能,兼具高耐受功率的特点,连续波模式下低噪声放大器的最大输入功率高于33dBm,这项优势允许客户在系统接收方案中,在LNA的输入端不需要额外增加限幅器,降低了系统插损,同时具备高饱和功率的特点,为系统提供更高的动态范围。


产品型号 工作频率(GHz)增益(dB)噪声系数(dB)P1dB(dBm)供电芯片面积(mm·mm)封装形式 详情
YLN01-0506C1 5 - 630115 +3V@ 40mA1.50x1.60DIE 点击下载
YLN02-0506C1 5-630115+3V@40mA4.00x4.00QFN 点击下载
YLN03-0507C1 5 - 7130.512 +1V@ 50mA1.50x2.00DIE 点击下载
YLN04-0812C1 8 - 12331.110 +5V@ 55mA2.40x1.56DIE 点击下载
YLN06-0812C1 8 - 12161.617 +5V@ 82mA2.00x1.00DIE 点击下载
YLN07-0713C1 7.5 - 13161.617 +5V@ 82mA4.00x4.00QFN 点击下载
YLN08-0812C2 8 - 12281.213 +4V@ 59mA2.00x1.10DIE 点击下载
YLN09-1315C1 13 - 15251.58 +3.3V@ 20mA2.20x1.10DIE 点击下载
YLN10-0001C1 0.03-0.6310.623+5V@95mA0.85x0.80DIE 点击下载
YLN11-0001C1 0.02-1.216.51.521+5V@40mA0.78x0.70DIE 点击下载
YLN12-1826C2 18 - 26191.57+1.5V@61mA1.50x2.00DIE 点击下载
YLN13-2434C1 24 - 34241.311 +3.5V@ 47mA2.64x2.00DIE 点击下载
YLN14-2543C1 25 - 43321.51 +1.1V@30mA3.00x2.00DIE 点击下载
YLN15-3238C1 32 - 38232.313 +5V@ 65mA2.12x1.60DIE 点击下载
YLN16-075110C1 75 - 110232.81 +1V@33mA2.00x3.00DIE 点击下载
YLN18-0618C1 6 - 1893.313 +5V@ 30mA1.40x1.20DIE 点击下载
YLN21-2543C1 25 - 43251.58 +1.5V@50mA1.68x3.00DIE 点击下载
YLN22-0112C1 1 - 12361.512 +1.5V@50mA1.50x1.00DIE 点击下载
YLN23-0118C1 1 - 18371.512 +1.5V@50mA1.50x1.00DIE 点击下载
YLN25-0204C1 2.7-3.528.60.811.8+5V@60mA/73mA2.00x1.90DIE 点击下载
YLN26-0204C1 2.6-3.8240.8513.5+5V@33mA2.50x1.40DIE 点击下载
YLN27-0206C1 2-6141.517.5+5V/4V@65mA1.75x1.40DIE 点击下载
YLN28-0104C1 0.8-3.5271.611.8+5V@36mA2.70x1.30DIE 点击下载
YLN30-0206C1 2-624.81.212+5V@37mA1.90x0.95DIE 点击下载
YLN31-3236C1 32-36201.55+5V@20mA2.50x3.00DIE 点击下载
YLN34-0102C1 0.8-2.022115+5V@40mA1.90x1.65DIE 点击下载
YLN35-0102C1 0.9-1.5320.515+5V@45mA2.00x1.60DIE 点击下载
YLN36-0812C1 8-12310.911+5V@30mA2.50x1.40DIE 点击下载
YLN37-0109C1 1-921.50.917+5V@50mA1.25x1.50DIE 点击下载
YLN39-0112C1 1-12191.614+5V@47mA1.25x1.00DIE 点击下载
YLN45-0208C1 2-8280.816+5V@42mA1.60x1.10DIE 点击下载
YLN46-0220C1 2-20151.812.5+5V@50mA3.10x1.50DIE 点击下载
YLN47-0220C1 2-20172.017+5V@75mA2.75x1.35DIE 点击下载
YLN49-0408C1 4-8230.711.5+5V@27mA2.00x0.95DIE 点击下载
YLN51-0618C1 6-1819.51.412.5+5V@28mA1.10x1.05DIE 点击下载
YLN52-0618C1 6-1827.51.514+5V@37mA1.50x1.10DIE 点击下载
YLN55-0812C1 8-12220.913.5+5V@32mA1.80x0.75DIE 点击下载
YLN57-1220C1 12-20281.37+5V@15mA1.75x0.90DIE 点击下载
YLN58-1525C1 15-25201.44.5+5V@13mA1.55x0.80DIE 点击下载
YLN63-2931C1 29-31261.94+5V@19mA1.90x0.80DIE 点击下载
YLN64-3237C1 32-37282.69+5V@20mA2.25x0.90DIE 点击下载
YLN65-0812C1 8 - 12261.211.8+5V/30mA1.75 x 1.10DIE 点击下载
YLN66-0408C1 4 - 826.61.1515.6+5V/52mA2.25 x 1.10DIE 点击下载
YLN67-0109C1 1 - 9281.412.2+5V/60mA2.20 x 1.20DIE 点击下载
YLN68-0218C1 2 - 18151.34~2.498~11.8+5V/32.5mA1.40 x 1.05DIE 点击下载
YLN69-0209C1 2 - 929115.4+5V/52mA2.25 x 1.10DIE 点击下载
YLN70-0109C2 1 - 9281.410.2+5V/67mA1.90 x 1.20DIE 点击下载
YLN71-0135C1 0.01 - 3.530.50.7518+5V/70mA1.19 x 1.25DIE 点击下载
YLN72-1722C1 17 - 22261.34+5V/14mA1. 50 x 0.75 x 0.07DIE 点击下载
YLN73-2232C1 22 - 32251.53+5V@15mA1.50 x 0.65 x 0.07DIE 点击下载
YLN74-3743C1 37 - 43251.84+5V@15mA1.30 x 0.75 x 0.07DIE 点击下载
YLN75-3252C1 32 - 52261.85+5V@12mA1.40 x 0.75 x 0.07DIE 点击下载
YLN76-6090C1 60 - 90213.2102.5V@67mA2.37 x 1.00 x 0.07DIE 点击下载
YLN77-195230C1 195 - 230245.8-1.2V@37mA2.14 x 0.97 x 0.05DIE 点击下载
YLN78-210270C1 210 - 270206.5-1.2V@36mA1.81 x 0.97 x 0.05DIE 点击下载
YLN79-0506C1 5 - 625.50.9145V@39mA2.30 x 1.10DIE 点击下载
YLN80-0206C1 2 - 6251.520+5V@80mA1.50 x 1.00DIE 点击下载
YLN81-0812C1 8 - 1292.5145V@16mA1.30 x 1.20DIE 点击下载
YLN82-0812C1 8 - 12102.2133.3V@16mA1.20 x 1.00DIE 点击下载
YLN83-0120C1 1 - 2013.62.614.45V@39mA1.60 x 1.20DIE 点击下载
YLN84-2443C1 24 - 43251.765V@20mA1.50 x 0.70 x 0.07DIE 点击下载
YLN85-1745C1 17 - 45232.3134V@69mA1.60 x 0.75 x 0.07DIE 点击下载
YLN86-1726C1 17 - 26241.565V@13mA1.50 x 0.75 x 0.07DIE 点击下载
63条记录  每页100条  第1页/共1

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